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| 1T411 Variable Capacitance Diode Description The 1T411 is a variable capacitance diode designed for analog cellular phone and it has a super miniature package. Features * Super miniature package * Small series resistance 0.40 Max. (f=470 MHz) * Large capacitance ratio 6.5 Typ. (C2/C25) * Capacitance deviation in a matching group 3 % (max.) Structure Silicon epitaxial planar-type diode M-235 Absolute Maximum Ratings (Ta=25 C) * Reverse voltage VR 30 V * Peak reverse voltage VRM 35 V (RL10 k) * Operating temperature Topr -20 to +75 C * Storage temperature Tstg -65 to +150 C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR C2 C25 C2/C25 rs C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz f=1 MHz CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz Min. 26.37 4.030 Typ. 29.50 4.400 6.5 0.35 Max. 20 33.05 4.807 0.40 3 (Ta=25 C) Unit nA pF pF % Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E95304B83-TE 1T411 Diode capacitance vs. Reverse voltage 100 1.000 Reverse current vs. Ambient temperature VR=28V 50 C-Diode capacitance (pF) IR-Reverse current (nA) Ta=25C 20 0.100 10 5 0.010 2 1 1 2 5 10 VR-Reverse voltage (V) 20 50 0.001 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Forward voltage vs. Ambient temperature 0.80 40 Reverse voltage vs. Ambient temperature VF-Forward voltage (V) 0.70 VR-Reverse voltage (V) IF=1mA IR=10A 35 0.60 30 0.50 -20 0 20 40 60 Ta-Ambient temperature (C) 80 25 -20 0 20 40 60 Ta-Ambient temperature (C) 80 --2-- 1T411 Diode capacitance vs. Ambient temperature 1.03 VR=1V C (Ta) /C (25C) -Diode capacitance 1.02 VR=2V 1.01 VR=7V VR=25V VR=15V 1.00 0.99 0.98 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Thermal coefficient of diode capacitance (ppm/C) Reverse current vs. Reverse voltage 1.000 Thermal coefficient of diode capacitance 1000 500 IR-Reverse current (nA) 0.100 200 100 Ta=80C 0.010 50 1 2 5 10 20 VR-Reverse voltage (V) 50 Ta=60C Ta=25C 0.001 1 2 5 10 20 VR-Reverse voltage (V) 50 --3-- 1T411 Package Outline Unit : mm M-235 + 0.2 1.25 - 0.1 + 0.1 0.3 - 0.05 0.2 0.9 0.1 2 1.7 0.1 1 + 0.1 0.3 - 0.05 2.5 0.2 0 0.05 + 0.1 0.11 - 0.06 0 to 10 NOTE: Dimension "" does not include mold protrusion. SONY CODE EIAJ CODE JEDEC CODE M-235 PACKAGE WEIGHT 0.1g Marking CATHODE MARK 2 11 B Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.) 1 --4-- |
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